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Nguyễn Thị Ngọc
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Nhân viên kinh doanh - 01652.010.042

Chia sẻ lên:
2SA1104

2SA1104

Mô tả chi tiết
 
GENERAL DESCRIPTION

Silicon PNP high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose 

QUICK REFERENCE DATA 

SYMBOL

PARAMETER

CONDITIONS

TYP

MAX

UNIT

VCESM

Collector-emitter voltage peak value

VBE = 0V

-

120

V

VCEO

Collector-emitter voltage (open base)

 

-

120

V

IC

Collector current (DC)

 

-

8

A

ICM

Collector current peak value

 

-

 

A

Ptot

Total power dissipation

Tmb    25

-

80

W

VCEsat

Collector-emitter saturation voltage

IC = 3.5A IB = 0.35A

-

2

V

VF

Diode forward voltage

IF = 3.5A

1.5

2.0

V

tf

Fall time

 

 

-

s

 LIMITING VALUES

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCESM

Collector-emitter voltage peak value

VBE = 0V

-

120

V

VCEO

Collector-emitter voltage (open base)

 

-

120

V

VEBO

Emitter-base oltage (open colloctor)

 

 

5

V

IC

Collector current (DC)

 

-

8

A

IB

Base current (DC)

 

-

2

A

Ptot

Total power dissipation

Tmb  25

-

80

W

Tstg

Storage temperature

 

-55

150

 

Tj

Junction temperature

 

-

150

 

ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

TYP

MAX

UNIT

I

Collector-base cut-off current

VCB=100V

-

0.2

mA

CBO

 

 

 

 

 

I

Emitter-base cut-off current

VEB=5V

-

0.2

mA

EBO

 

 

 

 

 

V(BR)CEO

Collector-emitter breakdown voltage

IC=1mA

120

 

V

VCEsat

Collector-emitter saturation voltages

IC = 3.5A IB = 0.35A

-

2

V

h

DC current gain

IC = 3A VCE = 5V

50

250

 

FE

 

 

 

 

 

fT

Transition frequency at f = 5MHz

IC = 1A VCE = 12V

20

-

MHz

Cc

Collector capacitance at f = 1MHz

VCB = 10V

300

-

pF

ton

On times

 

 

 

us

ts

Tum-off storage time

 

 

 

us

tf

Fall time

 

 

 

us

 

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