2SA1104
Silicon PNP high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose
QUICK REFERENCE DATA
|
SYMBOL |
PARAMETER |
CONDITIONS |
TYP |
MAX |
UNIT |
|
VCESM |
Collector-emitter voltage peak value |
VBE = 0V |
- |
120 |
V |
|
VCEO |
Collector-emitter voltage (open base) |
|
- |
120 |
V |
|
IC |
Collector current (DC) |
|
- |
8 |
A |
|
ICM |
Collector current peak value |
|
- |
|
A |
|
Ptot |
Total power dissipation |
Tmb 25 |
- |
80 |
W |
|
VCEsat |
Collector-emitter saturation voltage |
IC = 3.5A IB = 0.35A |
- |
2 |
V |
|
VF |
Diode forward voltage |
IF = 3.5A |
1.5 |
2.0 |
V |
|
tf |
Fall time |
|
|
- |
s |
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN |
MAX |
UNIT |
|
VCESM |
Collector-emitter voltage peak value |
VBE = 0V |
- |
120 |
V |
|
VCEO |
Collector-emitter voltage (open base) |
|
- |
120 |
V |
|
VEBO |
Emitter-base oltage (open colloctor) |
|
|
5 |
V |
|
IC |
Collector current (DC) |
|
- |
8 |
A |
|
IB |
Base current (DC) |
|
- |
2 |
A |
|
Ptot |
Total power dissipation |
Tmb 25 |
- |
80 |
W |
|
Tstg |
Storage temperature |
|
-55 |
150 |
|
|
Tj |
Junction temperature |
|
- |
150 |
|
|
SYMBOL |
PARAMETER |
CONDITIONS |
TYP |
MAX |
UNIT |
|
I |
Collector-base cut-off current |
VCB=100V |
- |
0.2 |
mA |
|
CBO |
|
|
|
|
|
|
I |
Emitter-base cut-off current |
VEB=5V |
- |
0.2 |
mA |
|
EBO |
|
|
|
|
|
|
V(BR)CEO |
Collector-emitter breakdown voltage |
IC=1mA |
120 |
|
V |
|
VCEsat |
Collector-emitter saturation voltages |
IC = 3.5A IB = 0.35A |
- |
2 |
V |
|
h |
DC current gain |
IC = 3A VCE = 5V |
50 |
250 |
|
|
FE |
|
|
|
|
|
|
fT |
Transition frequency at f = 5MHz |
IC = 1A VCE = 12V |
20 |
- |
MHz |
|
Cc |
Collector capacitance at f = 1MHz |
VCB = 10V |
300 |
- |
pF |
|
ton |
On times |
|
|
|
us |
|
ts |
Tum-off storage time |
|
|
|
us |
|
tf |
Fall time |
|
|
|
us |
